2N3858
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N3858
5961 - Semiconductor Devices and Associated Hardware
Electronic Industries Association
TRANSISTOR
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Technical Characteristics
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Inclosure Material
plastic
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Mounting Method
terminal
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Terminal Type And Quantity
3 uninsulated wire lead
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Special Features
junction pattern arrangement: npn
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Current Rating Per Characteristic
100.00 milliamperes maximum collector current, dc and 2.00 milliamperes maximum emitter current, dc
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Voltage Rating In Volts Per Characteristic
30.0 maximum breakdown voltage, collector-to-base, emitter open and 30.0 maximum breakdown voltage, collector-to-emitter, base open and 4.0 maximum breakdown voltage, emitter-to-base, collector open
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Semiconductor Material
silicon
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Internal Configuration
junction contact
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Overall Diameter
0.195 inches minimum and 0.205 inches maximum
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Overall Length
0.225 inches minimum and 0.265 inches maximum
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Power Rating Per Characteristic
200.0 milliwatts maximum collector power dissipation