10M60ZB1

Technical Characteristics

• Internal Junction Configuration

  pn all semiconductor device diode

• Maximum Operating Temp Per Measurement Point

  100.0 deg celsius ambient air all semiconductor device diode

• Overall Length

  1.253 inches maximum all semiconductor device diode

• Mounting Method

  threaded stud all semiconductor device diode

• Nominal Thread Size

  0.190 inches all semiconductor device diode

• Overall Width Across Flats

  0.430 inches nominal all semiconductor device diode

• Mounting Facility Quantity

  1 all semiconductor device diode

• Electrode Internally-Electrically Connected To Case

  anode all semiconductor device diode

• Voltage Rating In Volts Per Characteristic

  120.0 nominal nominal regulator voltage all semiconductor device diode

• Current Rating Per Characteristic

  130.00 milliamperes source cutoff current horsepower metric all semiconductor device diode

• Voltage Tolerance In Percent

  -1.0/+1.0 all semiconductor device diode

• Internal Configuration

  junction contact all semiconductor device diode

• Features Provided

  hermetically sealed case and mounting hardware

• Thread Series Designator

  unf all semiconductor device diode

• Terminal Type And Quantity

  1 tab, solder lug all semiconductor device diode and 1 threaded stud all semiconductor device diode

• Inclosure Material

  metal all semiconductor device diode

• Component Name And Quantity

  2 semiconductor device diode

• Function For Which Designed

  zener diode

• Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

  do-4 all semiconductor device diode

• Component Function Relationship

  matched

• Power Rating Per Characteristic

  10.0 watts small-signal input power, common-collector preset all semiconductor device diode

• Semiconductor Material

  silicon all semiconductor device diode