MIS-14150/35

Semiconductor Devices and Associated Hardware

TRANSISTOR

MIS-14150/35

5961-00-116-6987

5961 - Semiconductor Devices and Associated Hardware

U S Army Aviation And Missile

TRANSISTOR

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Technical Characteristics

  • Electrode Internally-Electrically Connected To Case

    collector

  • Terminal Type And Quantity

    3 uninsulated wire lead

  • Mounting Method

    terminal

  • Terminal Circle Diameter

    0.200 inches nominal

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius ambient air

  • Overall Length

    0.260 inches maximum

  • Voltage Rating In Volts Per Characteristic

    7.0 maximum emitter to base voltage, static, collector open and 100.0 maximum breakdown voltage, collector-to-emitter, base open and 155.0 maximum breakdown voltage, collector-to-base, emitter open

  • Overall Diameter

    0.370 inches maximum

  • Internal Configuration

    junction contact

  • Special Features

    junction pattern arrangement: npn

  • Current Rating Per Characteristic

    200.00 milliamperes source cutoff current minimum and 1.00 amperes source cutoff current maximum

  • Power Rating Per Characteristic

    1.0 watts small-signal input power, common-collector preset

  • Features Provided

    hermetically sealed case

  • Semiconductor Material

    silicon

  • Terminal Length

    1.500 inches minimum

  • Inclosure Material

    metal

Certified to
AS6081 Methods

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