2N4302

Semiconductor Devices and Associated Hardware

TRANSISTOR

2N4302

5961-00-118-4773

5961 - Semiconductor Devices and Associated Hardware

Joint Electron Device Engineering

TRANSISTOR

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Technical Characteristics

  • Voltage Rating In Volts Per Characteristic

    30.0 maximum breakdown voltage, drain-to-source, with all other terminals short-circuited to source and 20.0 maximum breakdown voltage, gate-to-source, with all other terminals short-circuited to source

  • Current Rating Per Characteristic

    10.00 milliamperes source cutoff current minor

  • Overall Diameter

    0.210 inches maximum

  • Channel Polarity And Control Type (Non-Core)

    n-channel junction type

  • Semiconductor Material

    silicon

  • Inclosure Material

    plastic

  • Overall Length

    0.200 inches maximum

  • Internal Configuration

    field effect

  • Terminal Circle Diameter

    0.100 inches nominal

  • Terminal Type And Quantity

    3 uninsulated wire lead

  • Mounting Method

    terminal

  • Power Rating Per Characteristic

    300.0 milliwatts small-signal input power, common-collector minimum

Certified to
AS6081 Methods

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