SSB8011

Semiconductor Devices and Associated Hardware

TRANSISTOR

SSB8011

5961-00-118-7404

5961 - Semiconductor Devices and Associated Hardware

Texas Instruments Incorporated

TRANSISTOR

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Technical Characteristics

  • Inclosure Material

    metal

  • Overall Length

    0.190 inches nominal

  • Terminal Length

    0.500 inches minimum

  • Internal Configuration

    junction contact

  • Mounting Method

    terminal

  • Semiconductor Material

    silicon

  • ~2

    oltage, emitter-to-base, collector open

  • Current Rating Per Characteristic

    1000.00 amperes maximum collector current, dc

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius junction

  • Precious Material

    gold

  • Overall Diameter

    0.219 inches nominal

  • Internal Junction Configuration

    npn

  • Terminal Circle Diameter

    0.100 inches nominal

  • ~1

    breakdown voltage, collector-to-emitter, base open and 15.0 maximum breakdown v

  • Voltage Rating In Volts Per Characteristic

    30.0 maximum breakdown voltage, collector-to-base, emitter open and 30.0 maximum

  • Power Rating Per Characteristic

    300.0 milliwatts maximum collector power dissipation

  • Precious Material And Location

    terminal surface gold

  • Terminal Type And Quantity

    3 uninsulated wire lead

Certified to
AS6081 Methods

Implementing Quality Procurement

A rigorous vendor selection process and vendor management system are essential to ensuring quality.
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Supplying Quality Products

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Providing Quality People

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