Q531752086

Semiconductor Devices and Associated Hardware

TRANSISTOR

Q531752086

5961-00-118-8441

5961 - Semiconductor Devices and Associated Hardware

Rheinmetall Air Defence Ag

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Technical Characteristics

  • Voltage Rating In Volts Per Characteristic

    400.0 maximum breakdown voltage, collector-to-emitter, with specified circuit between base and emitter and 400.0 maximum collector to base voltage, dc and 5.0 maximum emitter to base voltage, instantaneous

  • Current Rating Per Characteristic

    2.00 amperes source cutoff current minimum and 10.00 amperes source cutoff current maximum

  • Overall Diameter

    0.875 inches maximum

  • Special Features

    junction pattern arrangement: npn

  • Features Provided

    hermetically sealed case

  • Semiconductor Material

    silicon

  • Mounting Facility Quantity

    2

  • Terminal Type And Quantity

    2 uninsulated wire lead and 1 case

  • Maximum Operating Temp Per Measurement Point

    150.0 deg celsius junction

  • Mounting Method

    unthreaded hole

  • Inclosure Material

    metal

  • Overall Length

    0.375 inches nominal

  • Power Rating Per Characteristic

    125.0 watts small-signal input power, common-collector absolute

  • Electrode Internally-Electrically Connected To Case

    collector

Certified to
AS6081 Methods

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