213HJ
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
213HJ
5961 - Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
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Technical Characteristics
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Mounting Method
threaded stud
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Mounting Facility Quantity
1
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Voltage Rating In Volts Per Characteristic
400.0 maximum breakover voltage, dc
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Nominal Thread Size
0.500 inches
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Thread Series Designator
unf
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Terminal Type And Quantity
2 tab, solder lug and 1 threaded stud
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Electrode Internally-Electrically Connected To Case
anode
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Internal Configuration
junction contact
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Maximum Operating Temp Per Measurement Point
125.0 deg celsius junction
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Special Features
junction pattern arrangement: pnpn
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Overall Width Across Flats
1.227 inches maximum
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Power Rating Per Characteristic
3.0 watts small-signal input power, common-collector blank
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Inclosure Material
metal
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Overall Length
1.810 inches maximum
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Current Rating Per Characteristic
1200.00 amperes forward current, average absolute