2N5766

Technical Characteristics

• Inclosure Material

  metal

• Overall Diameter

  0.285 inches maximum

• Internal Configuration

  junction contact

• Internal Junction Configuration

  npn

• Mounting Method

  terminal

• Semiconductor Material

  silicon

• ~1

  breakdown voltage, emitter-to-base, collector open and 25.0 maximum breakdown vo

• ~2

  ltage, collector-to-emitter, base open

• Current Rating Per Characteristic

  200.00 milliamperes maximum collector current, dc and 40.00 milliamperes maximum

• Power Rating Per Characteristic

  5.0 watts maximum collector power dissipation

• Overall Length

  0.212 inches maximum

• Features Provided

  hermetically sealed case

• Voltage Rating In Volts Per Characteristic

  55.0 maximum breakdown voltage, collector-to-base, emitter open and 3.5 maximum

• ~1

  base current, dc

• Terminal Type And Quantity

  4 ribbon