2N5090

Semiconductor Devices and Associated Hardware

TRANSISTOR

2N5090

5961-00-124-4970

5961 - Semiconductor Devices and Associated Hardware

Lockheed Martin Corporation

TRANSISTOR

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Technical Characteristics

  • Mounting Method

    threaded stud

  • Mounting Facility Quantity

    1

  • Nominal Thread Size

    0.190 inches

  • Thread Series Designator

    unf

  • Voltage Rating In Volts Per Characteristic

    3.5 maximum breakdown voltage, emitter-to-base, collector open and 55.0 maximum breakdown voltage, collector-to-base, emitter open and 30.0 maximum breakdown voltage, collector-to-emitter, base open

  • Overall Width Across Flats

    0.437 inches maximum

  • Overall Length

    0.320 inches maximum

  • Internal Configuration

    junction contact

  • Special Features

    junction pattern arrangement: npn

  • Features Provided

    hermetically sealed case

  • Power Rating Per Characteristic

    4.0 watts small-signal input power, common-collector minimum

  • Semiconductor Material

    silicon

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius junction

  • Terminal Type And Quantity

    3 pin

  • Inclosure Material

    metal

  • Current Rating Per Characteristic

    400.00 milliamperes source cutoff current maximum and 400.00 milliamperes source cutoff current minimum

Certified to
AS6081 Methods

Implementing Quality Procurement

A rigorous vendor selection process and vendor management system are essential to ensuring quality.
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Supplying Quality Products

We take every measure to ensure that we supply quality, authentic parts including a strict vendor selection process and rigorous product inspections..
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Providing Quality People

Our team of dedicated account managers, procurement professionals and specialized inspectors is the most valuable resource we have.
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