J02040
Semiconductor Devices and Associated Hardware
TRANSISTOR
J02040
5961 - Semiconductor Devices and Associated Hardware
Trw Electronics And Defense Sector
TRANSISTOR
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Technical Characteristics
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Mounting Method
threaded stud
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Electrode Internally-Electrically Connected To Case
collector
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Mounting Facility Quantity
1
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Thread Series Designator
unc
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Voltage Rating In Volts Per Characteristic
36.0 maximum breakdown voltage, collector-to-emitter, with base short-circuited to emitter and 17.0 maximum breakdown voltage, collector-to-emitter, base open and 4.0 maximum breakdown voltage, emitter-to-base, collector open
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Power Rating Per Characteristic
80.0 watts small-signal input power, common-collector minimum
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Overall Length
0.380 inches maximum
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Internal Configuration
junction contact
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Special Features
junction pattern arrangement: npn
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Overall Diameter
0.375 inches maximum
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Semiconductor Material
silicon
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Nominal Thread Size
0.164 inches
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Inclosure Material
metal
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Current Rating Per Characteristic
6.00 amperes source cutoff current maximum
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Terminal Type And Quantity
2 uninsulated wire lead and 1 threaded stud