3N108
Semiconductor Devices and Associated Hardware
TRANSISTOR
3N108
5961 - Semiconductor Devices and Associated Hardware
Electronic Industries Association
TRANSISTOR
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Technical Characteristics
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Electrode Internally-Electrically Connected To Case
collector
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Mounting Method
terminal
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Overall Diameter
0.230 inches maximum
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Special Features
junction pattern arrangement: pnp
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-72
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Current Rating Per Characteristic
20.00 milliamperes source cutoff current minimum and 20.00 milliamperes source cutoff current maximum and 10.00 milliamperes source cutoff current blank
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Internal Configuration
junction contact
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Overall Length
0.210 inches maximum
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Voltage Rating In Volts Per Characteristic
-50.0 maximum collector to base voltage, dc and 50.0 maximum emitter to collector voltage, dc and -50.0 maximum emitter to base, rms
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Semiconductor Material
silicon
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Terminal Length
0.500 inches minimum
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Specification/Standard Data
80131-release4953 government specification
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Inclosure Material
metal
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Power Rating Per Characteristic
600.0 milliwatts small-signal input power, common-collector preset
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Terminal Type And Quantity
4 uninsulated wire lead
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Terminal Circle Diameter
0.100 inches nominal