2N4209

Semiconductor Devices and Associated Hardware

TRANSISTOR

2N4209

5961-00-127-6082

5961 - Semiconductor Devices and Associated Hardware

National Semiconductor Corporation

TRANSISTOR

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Technical Characteristics

  • Internal Junction Configuration

    pnp

  • Inclosure Material

    metal

  • Terminal Circle Diameter

    0.100 inches maximum

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius junction

  • Current Rating Per Characteristic

    50.00 milliamperes source cutoff current maximum

  • Terminal Length

    0.500 inches minimum

  • Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

    t0-18

  • Semiconductor Material

    silicon

  • Overall Length

    0.210 inches maximum

  • Features Provided

    hermetically sealed case

  • Internal Configuration

    junction contact

  • Voltage Rating In Volts Per Characteristic

    15.0 maximum breakdown voltage, collector-to-base, emitter open and 15.0 maximum breakdown voltage, collector-to-emitter, base open and 4.5 maximum emitter to base voltage, static, collector open

  • Overall Diameter

    0.230 inches maximum

  • Power Rating Per Characteristic

    300.0 milliwatts small-signal input power, common-collector minimum

  • Mounting Method

    terminal

  • Terminal Type And Quantity

    3 uninsulated wire lead

  • Electrode Internally-Electrically Connected To Case

    collector

Certified to
AS6081 Methods

Implementing Quality Procurement

A rigorous vendor selection process and vendor management system are essential to ensuring quality.
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Supplying Quality Products

We take every measure to ensure that we supply quality, authentic parts including a strict vendor selection process and rigorous product inspections..
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Providing Quality People

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