GT816BV1

Technical Characteristics

• Electrode Internally-Electrically Connected To Case

  collector

• Voltage Rating In Volts Per Characteristic

  300.0 maximum breakdown voltage, collector-to-base, emitter open and 5.0 maximum breakdown voltage, emitter-to-base, collector open

• Overall Diameter

  0.875 inches maximum

• Internal Configuration

  junction contact

• Special Features

  junction pattern arrangement: npn

• Current Rating Per Characteristic

  2.00 amperes source cutoff current minimum and 3.50 amperes source cutoff current maximum

• Features Provided

  hermetically sealed case

• Semiconductor Material

  silicon

• Mounting Facility Quantity

  2

• Terminal Type And Quantity

  2 uninsulated wire lead and 1 case

• Power Rating Per Characteristic

  100.0 watts small-signal input power, common-collector minimum

• Maximum Operating Temp Per Measurement Point

  200.0 deg celsius junction

• Mounting Method

  unthreaded hole

• Inclosure Material

  metal

• Overall Length

  0.375 inches nominal