2N2945A
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N2945A
5961 - Semiconductor Devices and Associated Hardware
Murata Erie North America Inc Divof
TRANSISTOR
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Technical Characteristics
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Current Rating Per Characteristic
100.00 milliamperes source cutoff current maximum and 1.00 milliamperes source cutoff current blank
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Internal Junction Configuration
pnp
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Overall Length
0.085 inches maximum
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Voltage Rating In Volts Per Characteristic
20.0 maximum breakdown voltage, collector-to-emitter, base open and 25.0 maximum breakdown voltage, collector-to-base, emitter open and 25.0 maximum breakdown voltage, emitter-to-base, collector open
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Electrode Internally-Electrically Connected To Case
collector
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Terminal Type And Quantity
3 uninsulated wire lead
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Mounting Method
terminal
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Overall Diameter
0.230 inches maximum
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Power Rating Per Characteristic
400.0 milliwatts small-signal input power, common-collector minimum
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Internal Configuration
junction contact
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Terminal Length
0.500 inches minimum
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Inclosure Material
metal