ST2T007LB0812

Semiconductor Devices and Associated Hardware

TRANSISTOR

ST2T007LB0812

5961-00-133-2504

5961 - Semiconductor Devices and Associated Hardware

Northrop Grumman Corp

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Technical Characteristics

  • Electrode Internally-Electrically Connected To Case

    collector

  • Semiconductor Material

    silicon

  • Terminal Type And Quantity

    4 uninsulated wire lead

  • Voltage Rating In Volts Per Characteristic

    50.0 maximum breakdown voltage,collector-to-base,emitter open and 50.0 maximum breakdown voltage,emitter-to-base,collector open

  • Power Rating Per Characteristic

    300.0 milliwatts maximum total power dissipation

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius junction

  • Terminal Circle Diameter

    0.100 inches nominal

  • Mounting Method

    terminal

  • Internal Junction Configuration

    pnp

  • Internal Configuration

    junction contact

  • Overall Diameter

    0.230 inches maximum

  • Terminal Length

    0.500 inches minimum

  • Overall Length

    0.210 inches maximum

  • Inclosure Material

    metal

  • Features Provided

    hermetically sealed case

Certified to
AS6081 Methods

Implementing Quality Procurement

A rigorous vendor selection process and vendor management system are essential to ensuring quality.
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Supplying Quality Products

We take every measure to ensure that we supply quality, authentic parts including a strict vendor selection process and rigorous product inspections..
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Providing Quality People

Our team of dedicated account managers, procurement professionals and specialized inspectors is the most valuable resource we have.
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