537035-7
Semiconductor Devices and Associated Hardware
TRANSISTOR
537035-7
5961 - Semiconductor Devices and Associated Hardware
Eads Deutschland T/A Cassidian
TRANSISTOR
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Technical Characteristics
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Internal Configuration
junction contact
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Voltage Rating In Volts Per Characteristic
30.0 maximum collector to base voltage, dc and 20.0 maximum collector to emitter voltage, dc and 2.0 maximum emitter to base voltage, dc
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Power Rating Per Characteristic
750.0 milliwatts maximum total device dissipation
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Current Rating Per Characteristic
100.00 milliamperes maximum collector current, dc
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Terminal Type And Quantity
4 uninsulated wire lead
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Iii Precious Material
gold
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Special Features
junction pattern arrangement: npn
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Terminal Length
0.500 inches minimum
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Mounting Method
terminal
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Iii Precious Material And Location
terminal surface gold
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-72
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Semiconductor Material
silicon
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Overall Length
0.210 inches maximum
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Overall Diameter
0.230 inches maximum
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Inclosure Material
metal
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Test Data Document
96214-537035 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)