MS175TE
Semiconductor Devices and Associated Hardware
TRANSISTOR
MS175TE
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Internal Configuration
junction contact
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Special Features
junction pattern arrangement: npn
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
30.0 maximum collector to base voltage, dc and 20.0 maximum collector to emitter voltage, dc and 1.0 maximum emitter to base, rms
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Terminal Type And Quantity
3 ribbon
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Current Rating Per Characteristic
100.00 milliamperes source cutoff current maximum
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Power Rating Per Characteristic
300.0 milliwatts small-signal input power, common-collector preset
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Overall Diameter
0.240 inches nominal
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Mounting Method
terminal
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Inclosure Material
ceramic
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Overall Length
0.072 inches nominal