85AJ029S
Semiconductor Devices and Associated Hardware
TRANSISTOR
85AJ029S
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Voltage Rating In Volts Per Characteristic
100.0 maximum breakdown voltage, collector-to-base, emitter open and
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Power Rating Per Characteristic
25.0 watts maximum total power dissipation
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Terminal Type And Quantity
1 case
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Terminal Type And Quantity
2 uninsulated wire lead and
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Voltage Rating In Volts Per Characteristic
1.5 maximum base to emitter saturation voltage
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Semiconductor Material
silicon
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Features Provided
hermetically sealed case
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-3
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Internal Configuration
junction contact
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Mounting Facility Quantity
2
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Overall Diameter
0.875 inches maximum
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Inclosure Material
metal
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Current Rating Per Characteristic
2.00 amperes maximum base current, dc
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Current Rating Per Characteristic
10.00 amperes maximum collector current, dc and
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Voltage Rating In Volts Per Characteristic
80.0 maximum breakdown voltage, collector to emitter, sustained and
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Mounting Method
unthreaded hole
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Internal Junction Configuration
pn
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Overall Length
0.450 inches maximum