84398
Semiconductor Devices and Associated Hardware
TRANSISTOR
84398
5961 - Semiconductor Devices and Associated Hardware
Northrop Grumman Systems Corporation
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Mounting Method
unthreaded hole
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Mounting Facility Quantity
2
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Terminal Type And Quantity
2 pin and 1 case
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Semiconductor Material
silicon
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Overall Diameter
0.500 inches maximum
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Features Provided
hermetically sealed case
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Special Features
junction pattern arrangement: npn
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Internal Configuration
junction contact
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Current Rating Per Characteristic
2.00 amperes source cutoff current maximum
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Voltage Rating In Volts Per Characteristic
300.0 maximum breakdown voltage, collector-to-emitter, base open and 500.0 maximum breakdown voltage, collector-to-base, emitter open and 6.0 maximum breakdown voltage, emitter-to-base, collector open
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Test Data Document
15786-84398 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
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Power Rating Per Characteristic
35.0 watts small-signal input power, common-collector preset
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Electrode Internally-Electrically Connected To Case
collector
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Overall Length
0.340 inches maximum