2N5103

Semiconductor Devices and Associated Hardware

TRANSISTOR

2N5103

5961-00-139-1757

5961 - Semiconductor Devices and Associated Hardware

Burns And Towne Inc

TRANSISTOR

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Technical Characteristics

  • Channel Polarity And Control Type

    n-channel junction type

  • Mounting Method

    terminal

  • Current Rating Per Characteristic

    30.00 milliamperes maximum drain current and 10.00 milliamperes maximum gate current

  • Inclosure Material

    metal

  • Overall Length

    0.210 inches maximum

  • Terminal Length

    0.500 inches minimum

  • Overall Diameter

    0.230 inches maximum

  • Internal Configuration

    field effect

  • Features Provided

    hermetically sealed case

  • Semiconductor Material

    silicon

  • Voltage Rating In Volts Per Characteristic

    30.0 maximum breakdown voltage, drain-to-source, with all other terminals short-circuited to source and 30.0 maximum breakdown voltage, gate-to-source, with all other terminals short-circuited to source

  • Power Rating Per Characteristic

    300.0 milliwatts maximum collector power dissipation

  • Terminal Type And Quantity

    3 uninsulated wire lead

  • Specification/Standard Data

    80131-release5571 professional/industrial association specification

Certified to
AS6081 Methods

Implementing Quality Procurement

A rigorous vendor selection process and vendor management system are essential to ensuring quality.
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Supplying Quality Products

We take every measure to ensure that we supply quality, authentic parts including a strict vendor selection process and rigorous product inspections..
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Providing Quality People

Our team of dedicated account managers, procurement professionals and specialized inspectors is the most valuable resource we have.
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