F1100

Semiconductor Devices and Associated Hardware

TRANSISTOR

F1100

5961-00-139-2326

5961 - Semiconductor Devices and Associated Hardware

American Hofmann Corporation

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Technical Characteristics

  • Channel Polarity And Control Type (Non-Core)

    n-channel insulated gate type

  • Mounting Method

    terminal

  • Overall Diameter

    0.230 inches maximum

  • Power Rating Per Characteristic

    375.0 milliwatts small-signal input power, common-collector absolute

  • Features Provided

    hermetically sealed case

  • Overall Length

    0.210 inches maximum

  • Voltage Rating In Volts Per Characteristic

    40.0 maximum breakdown voltage, drain-to-source, with all other terminals short-circuited to source and 40.0 maximum breakdown voltage, gate-to-source, with all other terminals short-circuited to source

  • Semiconductor Material

    silicon

  • Current Rating Per Characteristic

    50.00 milliamperes source cutoff current maximum of standard range

  • Terminal Length

    0.500 inches minimum

  • Internal Configuration

    field effect

  • Inclosure Material

    metal

  • Terminal Type And Quantity

    4 uninsulated wire lead

  • Specification/Standard Data

    80131-release5870 professional/industrial association specification

  • Terminal Circle Diameter

    0.100 inches nominal

Certified to
AS6081 Methods

Implementing Quality Procurement

A rigorous vendor selection process and vendor management system are essential to ensuring quality.
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Supplying Quality Products

We take every measure to ensure that we supply quality, authentic parts including a strict vendor selection process and rigorous product inspections..
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Providing Quality People

Our team of dedicated account managers, procurement professionals and specialized inspectors is the most valuable resource we have.
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