RS1089
Semiconductor Devices and Associated Hardware
TRANSISTOR
RS1089
5961 - Semiconductor Devices and Associated Hardware
Raytheon Technical Services Company
TRANSISTOR
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Technical Characteristics
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Inclosure Material
glass and metal
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Overall Length
0.170 inches minimum and 0.210 inches maximum
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Overall Diameter
0.209 inches minimum and 0.230 inches maximum
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-18
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Mounting Method
terminal
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Power Rating Per Characteristic
400.0 milliwatts maximum collector power dissipation
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Internal Configuration
junction contact
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Electrode Internally-Electrically Connected To Case
collector
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Internal Junction Configuration
npn
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Terminal Circle Diameter
0.095 inches minimum and 0.105 inches maximum
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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~1
r voltage/static/base open and 7.0 maximum emitter to base voltage, dc and 1.7 m
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~2
aximum base to emitter saturation voltage
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Voltage Rating In Volts Per Characteristic
100.0 maximum collector to base voltage, dc and 60.0 maximum collector to emitte
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Current Rating Per Characteristic
500.00 milliamperes maximum collector current, dc
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Test Data Document
06481-932072 drawing
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Terminal Type And Quantity
3 uninsulated wire lead