3008509-022-1

Technical Characteristics

• Design Function And Quantity

  4 gate, nand

• Test Data Document

  96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Inclosure Material

  ceramic

• Case Outline Source And Designator

  d-1 mil-m-38510

• Maximum Power Dissipation Rating

  10.0 milliwatts

• Inclosure Configuration

  dual-in-line

• Output Logic Form

  transistor-transistor logic

• Body Height

  0.180 inches maximum

• Body Width

  0.245 inches minimum and 0.280 inches maximum

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Input Circuit Pattern

  quad 2 input

• Body Length

  0.755 inches minimum and 0.785 inches maximum

• Features Provided

  hermetically sealed and burn in and w/totem pole output and positive outputs

• Time Rating Per Chacteristic

  22.00 nanoseconds maximum propagation delay time, low to high level output and 15.00 nanoseconds maximum propagation delay time, high to low level output