8508290-1

Technical Characteristics

• Semiconductor Material

  silicon

• Nominal Thread Size

  0.164 inches

• Mounting Method

  threaded stud

• Electrode Internally-Electrically Connected To Case

  source

• Overall Diameter

  0.365 inches minimum and 0.385 inches maximum

• Terminal Type And Quantity

  1 threaded stud and 4 ribbon

• Internal Junction Configuration

  npn

• Internal Configuration

  junction contact

• Mounting Facility Quantity

  1

• Overall Length

  0.245 inches minimum and 0.275 inches maximum

• Inclosure Material

  metal

• Thread Series Designator

  unc

• Maximum Operating Temp Per Measurement Point

  200.0 deg celsius junction

• Power Rating Per Characteristic

  30.0 watts maximum total power dissipation

• Current Rating Per Characteristic

  3.00 amperes maximum collector current, dc

• Voltage Rating In Volts Per Characteristic

  40.0 maximum collector to emitter voltage/static/base open and 4.0 maximum emitter to base voltage, static, collector open