129AS261-1
Semiconductor Devices and Associated Hardware
TRANSISTOR
129AS261-1
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Current Rating Per Characteristic
500.00 microamperes zero-gate-voltage source current preset
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Inclosure Material
metal
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Mounting Method
unthreaded hole
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Mounting Facility Quantity
2
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Overall Height
0.260 inches maximum
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Overall Width
0.810 inches maximum
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Semiconductor Material
silicon
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Maximum Operating Temp Per Measurement Point
71.0 deg celsius ambient air
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Overall Length
0.165 inches maximum
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Features Provided
hermetically sealed case
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Voltage Rating In Volts Per Characteristic
50.0 maximum breakdown voltage, collector-to-base, emitter open and 50.0 maximum breakdown voltage, collector-to-emitter, with specified resistance between base and emitter and 3.0 maximum breakdown voltage, emitter-to-base, collector open
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Internal Configuration
junction contact
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Special Features
min. voltage; junction pattern arrangement: npn
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Terminal Type And Quantity
3 uninsulated wire lead