7844859P001

Technical Characteristics

• Design Function And Quantity

  4 gate, nand-nor

• Maximum Power Dissipation Rating

  109.0 milliwatts

• Inclosure Material

  ceramic and glass

• Body Length

  0.660 inches minimum and 0.785 inches maximum

• Inclosure Configuration

  dual-in-line

• Voltage Rating And Type Per Characteristic

  5.5 volts maximum power source

• Case Outline Source And Designator

  t0-116 joint electron device engineering council

• Time Rating Per Chacteristic

  50.00 nanoseconds maximum propagation delay time, low to high level output and 30.00 nanoseconds maximum propagation delay time, high to low level output

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Features Provided

  monolithic and positive outputs and low power and hermetically sealed and medium speed

• Terminal Type And Quantity

  14 printed circuit

• Input Circuit Pattern

  quad 2 input

• Output Logic Form

  diode-transistor logic

• Body Width

  0.220 inches minimum and 0.280 inches maximum

• Test Data Document

  96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).

• Body Height

  0.140 inches minimum and 0.180 inches maximum

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Terminal Surface Treatment

  solder