2N4147
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
2N4147
5961 - Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
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Technical Characteristics
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Power Rating Per Characteristic
200.0 milliwatts small-signal input power, common-collector blank
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Mounting Method
terminal
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Electrode Internally-Electrically Connected To Case
collector
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Overall Diameter
0.209 inches minimum and 0.230 inches maximum
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Voltage Rating In Volts Per Characteristic
100.0 maximum breakover voltage, dc
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Internal Configuration
junction contact
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Features Provided
hermetically sealed case
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Current Rating Per Characteristic
8.00 amperes forward current, average absolute
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Semiconductor Material
silicon
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Terminal Length
0.500 inches maximum
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Special Features
junction pattern arrangement: pnpn
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Inclosure Material
glass and metal
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Maximum Operating Temp Per Measurement Point
110.0 deg celsius ambient air
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Terminal Type And Quantity
4 uninsulated wire lead
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Overall Length
0.115 inches minimum and 0.150 inches maximum
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Terminal Circle Diameter
0.100 inches nominal