MIS-12773

Semiconductor Devices and Associated Hardware

TRANSISTOR

MIS-12773

5961-00-150-1542

5961 - Semiconductor Devices and Associated Hardware

U S Army Aviation And Missile

TRANSISTOR

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Technical Characteristics

  • Mounting Method

    threaded stud

  • Mounting Facility Quantity

    1

  • Thread Series Designator

    unf

  • Test Data Document

    18876-mis-12773 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)

  • Overall Length

    1.520 inches maximum

  • Internal Configuration

    junction contact

  • Special Features

    junction pattern arrangement: npn

  • Features Provided

    hermetically sealed case and mounting hardware

  • Terminal Type And Quantity

    2 tab, solder lug and 1 wire hook

  • Semiconductor Material

    silicon

  • Overall Width Across Flats

    0.875 inches maximum

  • Nominal Thread Size

    0.312 inches

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius junction

  • Power Rating Per Characteristic

    100.0 watts small-signal input power, common-collector preset

  • Voltage Rating In Volts Per Characteristic

    100.0 maximum collector to base voltage, dc and 80.0 maximum collector to emitter voltage, dc and 8.0 maximum emitter to base voltage, dc

  • Inclosure Material

    metal

  • Current Rating Per Characteristic

    20.00 amperes source cutoff current maximum

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