121G3350-2-1

Semiconductor Devices and Associated Hardware

TRANSISTOR

121G3350-2-1

5961-00-153-4421

5961 - Semiconductor Devices and Associated Hardware

Herley Chicago

TRANSISTOR

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Technical Characteristics

  • Inclosure Material

    metal

  • Internal Configuration

    field effect-dual gate

  • (Non-Core Data) Channel Polarity And Control Type

    n-channel insulated gate type

  • Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

    to-72

  • Mounting Method

    terminal

  • Overall Length

    0.170 inches minimum and 0.210 inches maximum

  • Terminal Length

    0.500 inches minimum

  • Overall Diameter

    0.209 inches minimum and 0.230 inches maximum

  • Electrode Internally-Electrically Connected To Case

    source

  • Semiconductor Material

    silicon

  • Voltage Rating In Volts Per Characteristic

    20.0 maximum drain to source voltage

  • Power Rating Per Characteristic

    330.0 milliwatts maximum total device dissipation

  • Iii Precious Material And Location

    terminal surfaces gold

  • Iii Precious Material

    gold

  • Test Data Document

    67177-47g3205 specification

  • Terminal Type And Quantity

    4 uninsulated wire lead

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