121G3362-1-1

Technical Characteristics

• Mounting Facility Quantity

  2

• Internal Configuration

  junction contact

• Internal Junction Configuration

  npn

• Voltage Rating In Volts Per Characteristic

  50.0 maximum breakdown voltage, collector-to-base, emitter open and 50.0 maximum breakdown voltage, collector-to-emitter, base open and 3.5 maximum breakdown voltage, emitter-to-base, collector open

• Inclosure Material

  metal

• Overall Length

  0.065 inches maximum

• Overall Diameter

  0.240 inches maximum

• Mounting Method

  unthreaded hole

• Features Provided

  hermetically sealed case

• Semiconductor Material

  silicon

• Current Rating Per Characteristic

  250.00 milliamperes maximum collector current, dc

• Power Rating Per Characteristic

  1.0 watts maximum collector power dissipation

• Terminal Type And Quantity

  3 ribbon