SS3689H3
Semiconductor Devices and Associated Hardware
TRANSISTOR
SS3689H3
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Terminal Type And Quantity
3 uninsulated wire lead
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius ambient air
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Power Rating Per Characteristic
300.0 milliwatts maximum collector power dissipation
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~2
e, static, collector open
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~1
ector to emitter voltage/static/base open and 4.5 maximum emitter to base voltag
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Semiconductor Material
silicon
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Features Provided
hermetically sealed case
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Terminal Circle Diameter
0.100 inches nominal
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Electrode Internally-Electrically Connected To Case
collector
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
t0-18
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Internal Configuration
junction contact
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Terminal Length
0.500 inches minimum
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Inclosure Material
metal
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Voltage Rating In Volts Per Characteristic
20.0 maximum collector to base voltage/static/emitter open and 12.0 maximum coll
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Mounting Method
terminal
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Internal Junction Configuration
npn
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Overall Diameter
0.209 inches minimum and 0.230 inches maximum
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Overall Length
0.170 inches minimum and 0.210 inches maximum