930C567-5
Semiconductor Devices and Associated Hardware
TRANSISTOR
930C567-5
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Mounting Method
threaded stud
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Electrode Internally-Electrically Connected To Case
collector
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Mounting Facility Quantity
1
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Terminal Type And Quantity
3 uninsulated wire lead
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Thread Series Designator
unc
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Internal Configuration
junction contact
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Special Features
junction pattern arrangement: npn
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Voltage Rating In Volts Per Characteristic
1.2 maximum base to emitter voltage, dc and 120.0 maximum breakdown voltage, collector-to-emitter, base open and 5.0 maximum collector to emitter voltage, dc and 120.0 maximum breakdown voltage, collector to emitter, sustained
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Overall Length
0.195 inches minimum and 0.215 inches maximum
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Current Rating Per Characteristic
1.00 milliamperes zero-gate-voltage source current peak
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Features Provided
hermetically sealed case
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Nominal Thread Size
0.138 inches
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Semiconductor Material
silicon
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Test Data Document
89954-930c567 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
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Inclosure Material
metal
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Maximum Operating Temp Per Measurement Point
175.0 deg celsius junction
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Overall Diameter
0.440 inches minimum and 0.460 inches maximum