930C567-6

Semiconductor Devices and Associated Hardware

TRANSISTOR

930C567-6

5961-00-168-1632

5961 - Semiconductor Devices and Associated Hardware

Bae Systems Controls Inc.

TRANSISTOR

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Technical Characteristics

  • Inclosure Material

    metal

  • Internal Configuration

    junction contact

  • Electrode Internally-Electrically Connected To Case

    collector

  • Features Provided

    hermetically sealed case

  • Nominal Thread Size

    0.138 inches

  • Semiconductor Material

    silicon

  • Voltage Rating In Volts Per Characteristic

    120.0 maximum breakdown voltage, collector-to-emitter, base open and 5.0 maximum collector to emitter voltage, dc and 1.2 maximum base to emitter voltage, dc and 120.0 maximum breakdown voltage, collector to emitter, sustained

  • Current Rating Per Characteristic

    30.00 microamperes maximum collector cutoff current, dc, with specified resistance between base and emitter

  • Special Features

    junction pattern arrangement: npn

  • Test Data Document

    89954-930c567 drawing

  • Terminal Type And Quantity

    3 uninsulated wire lead

  • Overall Length

    0.195 inches minimum and 0.215 inches maximum

  • Overall Diameter

    0.440 inches minimum and 0.460 inches maximum

  • Mounting Facility Quantity

    1

  • Mounting Method

    threaded stud

  • Maximum Operating Temp Per Measurement Point

    175.0 deg celsius junction

  • Thread Series Designator

    unc

Certified to
AS6081 Methods

Implementing Quality Procurement

A rigorous vendor selection process and vendor management system are essential to ensuring quality.
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Supplying Quality Products

We take every measure to ensure that we supply quality, authentic parts including a strict vendor selection process and rigorous product inspections..
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Providing Quality People

Our team of dedicated account managers, procurement professionals and specialized inspectors is the most valuable resource we have.
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