930C567-6
Semiconductor Devices and Associated Hardware
TRANSISTOR
930C567-6
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
ACT NOW! SUBMIT A QUICK QUOTE.
Technical Characteristics
-
Inclosure Material
metal
-
Internal Configuration
junction contact
-
Electrode Internally-Electrically Connected To Case
collector
-
Features Provided
hermetically sealed case
-
Nominal Thread Size
0.138 inches
-
Semiconductor Material
silicon
-
Voltage Rating In Volts Per Characteristic
120.0 maximum breakdown voltage, collector-to-emitter, base open and 5.0 maximum collector to emitter voltage, dc and 1.2 maximum base to emitter voltage, dc and 120.0 maximum breakdown voltage, collector to emitter, sustained
-
Current Rating Per Characteristic
30.00 microamperes maximum collector cutoff current, dc, with specified resistance between base and emitter
-
Special Features
junction pattern arrangement: npn
-
Test Data Document
89954-930c567 drawing
-
Terminal Type And Quantity
3 uninsulated wire lead
-
Overall Length
0.195 inches minimum and 0.215 inches maximum
-
Overall Diameter
0.440 inches minimum and 0.460 inches maximum
-
Mounting Facility Quantity
1
-
Mounting Method
threaded stud
-
Maximum Operating Temp Per Measurement Point
175.0 deg celsius junction
-
Thread Series Designator
unc