2N3209

Semiconductor Devices and Associated Hardware

SEMICONDUCTOR DEVICE,THYRISTOR

2N3209

5961-00-172-7882

5961 - Semiconductor Devices and Associated Hardware

Military Specifications

SEMICONDUCTOR DEVICE,THYRISTOR

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Technical Characteristics

  • Test Data Document

    81349-mil-s-19500 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type

  • Overall Diameter

    0.209 inches minimum and 0.230 inches maximum

  • Electrode Internally-Electrically Connected To Case

    anode

  • Internal Configuration

    junction contact

  • Features Provided

    hermetically sealed case

  • Terminal Length

    0.500 inches minimum and 0.750 inches maximum

  • Semiconductor Material

    silicon

  • Special Features

    junction pattern arrangement: pnpn

  • Specification/Standard Data

    81349-mil-s-19500/419 government specification

  • Voltage Rating In Volts Per Characteristic

    1.5 maximum forward voltage, peak and 0.8 maximum gate trigger voltage, dc

  • Current Rating Per Characteristic

    8.00 amperes source cutoff current outside diameter and 200.00 microamperes forward current, total rms preset

  • Inclosure Material

    metal

  • Overall Length

    0.170 inches minimum and 0.210 inches maximum

  • Terminal Circle Diameter

    0.100 inches nominal

  • ~1

    data on certain environmental and performanc

  • Maximum Operating Temp Per Measurement Point

    150.0 deg celsius ambient air

  • Terminal Type And Quantity

    3 uninsulated wire lead

  • Mounting Method

    terminal

Certified to
AS6081 Methods

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