SS-20092-1

Semiconductor Devices and Associated Hardware

TRANSISTOR

SS-20092-1

5961-00-173-4359

5961 - Semiconductor Devices and Associated Hardware

Bae Systems Integrated System

TRANSISTOR

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Technical Characteristics

  • Mounting Method

    terminal

  • Overall Diameter

    0.230 inches maximum

  • Current Rating Per Characteristic

    100.00 milliamperes source cutoff current maximum

  • Internal Configuration

    junction contact

  • Special Features

    junction pattern arrangement: npn

  • Features Provided

    hermetically sealed case

  • Overall Length

    0.210 inches maximum

  • Power Rating Per Characteristic

    200.0 milliwatts small-signal input power, common-collector preset

  • Semiconductor Material

    silicon

  • Voltage Rating In Volts Per Characteristic

    12.0 maximum collector to emitter voltage/static/base open and 20.0 maximum collector to base voltage, dc and 3.0 maximum emitter to base voltage, dc

  • Terminal Length

    0.500 inches minimum

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius junction

  • Inclosure Material

    metal

  • Terminal Type And Quantity

    4 uninsulated wire lead

  • Terminal Circle Diameter

    0.100 inches nominal

Certified to
AS6081 Methods

Implementing Quality Procurement

A rigorous vendor selection process and vendor management system are essential to ensuring quality.
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Supplying Quality Products

We take every measure to ensure that we supply quality, authentic parts including a strict vendor selection process and rigorous product inspections..
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Providing Quality People

Our team of dedicated account managers, procurement professionals and specialized inspectors is the most valuable resource we have.
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