2N5239

Semiconductor Devices and Associated Hardware

TRANSISTOR

2N5239

5961-00-190-7040

5961 - Semiconductor Devices and Associated Hardware

Newark Electronics Corporation

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Technical Characteristics

  • Electrode Internally-Electrically Connected To Case

    collector

  • Overall Diameter

    0.875 inches maximum

  • Internal Configuration

    junction contact

  • Special Features

    junction pattern arrangement: npn

  • Semiconductor Material

    silicon

  • Specification/Standard Data

    80131-release5935 professional/industrial association specification

  • Current Rating Per Characteristic

    2.00 amperes source cutoff current minimum and 5.00 amperes source cutoff current maximum

  • Mounting Facility Quantity

    2

  • Voltage Rating In Volts Per Characteristic

    225.0 maximum breakdown voltage, collector-to-emitter, base open and 300.0 maximum breakdown voltage, collector-to-base, emitter open and 6.0 maximum breakdown voltage, emitter-to-base, collector open

  • Overall Length

    0.375 inches nominal

  • Inclosure Material

    metal

  • Mounting Method

    unthreaded hole

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius junction

  • Power Rating Per Characteristic

    100.0 watts small-signal input power, common-collector minimum

  • Terminal Type And Quantity

    2 uninsulated wire lead and 1 case

Certified to
AS6081 Methods

Implementing Quality Procurement

A rigorous vendor selection process and vendor management system are essential to ensuring quality.
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Supplying Quality Products

We take every measure to ensure that we supply quality, authentic parts including a strict vendor selection process and rigorous product inspections..
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Providing Quality People

Our team of dedicated account managers, procurement professionals and specialized inspectors is the most valuable resource we have.
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