580R785H01
Semiconductor Devices and Associated Hardware
TRANSISTOR
580R785H01
5961 - Semiconductor Devices and Associated Hardware
Northrop Grumman Systems Corporation
TRANSISTOR
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Technical Characteristics
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Mounting Method
terminal
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Precious Material And Location
terminal surface gold
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Special Features
junction pattern arrangement: pnp
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Precious Material
gold
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Current Rating Per Characteristic
30.00 milliamperes source cutoff current maximum
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Internal Configuration
junction contact
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Features Provided
hermetically sealed case
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Power Rating Per Characteristic
200.0 milliwatts small-signal input power, common-collector preset
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
15.0 maximum collector to base voltage/static/emitter open and 15.0 maximum collector to emitter voltage/static/base open and 4.5 maximum emitter to base voltage, static, collector open
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Terminal Length
0.500 inches minimum
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Overall Length
0.190 inches nominal
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Inclosure Material
metal
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Overall Diameter
0.220 inches nominal
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Terminal Type And Quantity
4 uninsulated wire lead