JAN2N1916

Semiconductor Devices and Associated Hardware

SEMICONDUCTOR DEVICE,THYRISTOR

JAN2N1916

5961-00-197-3018

5961 - Semiconductor Devices and Associated Hardware

General Electric Co

SEMICONDUCTOR DEVICE,THYRISTOR

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Technical Characteristics

  • Overall Width Across Flats

    1.062 inches maximum

  • Power Rating Per Characteristic

    500.0 milliwatts maximum peak gate power dissipation

  • Maximum Operating Temp Per Measurement Point

    125.0 deg celsius ambient air

  • Special Features

    item must comply with requirements of desc production std no. l01047; for navy nuclear propulsion plant products only

  • Terminal Type And Quantity

    1 threaded stud and 2 uninsulated wire lead

  • Nominal Thread Size

    0.500 inches

  • Criticality Code Justification

    feat

  • Semiconductor Material

    silicon

  • Current Rating Per Characteristic

    1000.00 amperes maximum average forward current averaged over a full 60-hz cycle

  • Inclosure Material

    metal

  • Features Provided

    hermetically sealed case

  • Overall Length

    1.125 inches maximum

  • Mounting Facility Quantity

    1

  • Mounting Method

    threaded stud

  • Voltage Rating In Volts Per Characteristic

    400.0 maximum breakover voltage, dc

  • Thread Series Designator

    unf

Certified to
AS6081 Methods

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