2N3880
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N3880
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Overall Length
0.210 inches maximum
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Terminal Length
0.500 inches minimum
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Overall Diameter
0.195 inches maximum
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Features Provided
gold plated leads and hermetically sealed case
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Power Rating Per Characteristic
200.0 milliwatts maximum total power dissipation
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Precious Material
gold
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Terminal Type And Quantity
4 uninsulated wire lead
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Inclosure Material
metal
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Internal Configuration
junction contact
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-72
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Internal Junction Configuration
npn
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Mounting Method
terminal
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Terminal Circle Diameter
0.100 inches nominal
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
30.0 maximum breakdown voltage, collector-to-base, emitter open and 15.0 maximum breakdown voltage, collector-to-emitter, base open and 2.5 maximum breakdown voltage, emitter-to-base, collector open
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Precious Material And Location
lead surfaces gold