2N796
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N796
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
ACT NOW! SUBMIT A QUICK QUOTE.
Technical Characteristics
-
Specification/Standard Data
80131-release4185 professional/industrial association specification
-
~1
breakdown voltage, collector-to-emitter, base open and 4.0 maximum breakdown vo
-
Semiconductor Material
germanium
-
Electrode Internally-Electrically Connected To Case
collector
-
Terminal Length
0.500 inches minimum
-
Overall Length
0.210 inches maximum
-
Power Rating Per Characteristic
120.0 milliwatts maximum collector power dissipation
-
Current Rating Per Characteristic
100.00 milliamperes maximum collector current, dc
-
Voltage Rating In Volts Per Characteristic
12.0 maximum breakdown voltage, collector-to-base, emitter open and 12.0 maximum
-
~2
ltage, emitter-to-base, collector open
-
Mounting Method
terminal
-
Internal Junction Configuration
pnp
-
Internal Configuration
junction contact
-
Overall Diameter
0.230 inches maximum
-
Inclosure Material
plastic
-
Terminal Type And Quantity
3 uninsulated wire lead