2N796
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N796
5961 - Semiconductor Devices and Associated Hardware
Electronic Industries Association
TRANSISTOR
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Technical Characteristics
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Specification/Standard Data
80131-release4185 professional/industrial association specification
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~1
breakdown voltage, collector-to-emitter, base open and 4.0 maximum breakdown vo
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Semiconductor Material
germanium
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Electrode Internally-Electrically Connected To Case
collector
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Terminal Length
0.500 inches minimum
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Overall Length
0.210 inches maximum
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Power Rating Per Characteristic
120.0 milliwatts maximum collector power dissipation
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Current Rating Per Characteristic
100.00 milliamperes maximum collector current, dc
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Voltage Rating In Volts Per Characteristic
12.0 maximum breakdown voltage, collector-to-base, emitter open and 12.0 maximum
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~2
ltage, emitter-to-base, collector open
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Mounting Method
terminal
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Internal Junction Configuration
pnp
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Internal Configuration
junction contact
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Overall Diameter
0.230 inches maximum
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Inclosure Material
plastic
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Terminal Type And Quantity
3 uninsulated wire lead