SDT8016

Technical Characteristics

• Mounting Method

  threaded stud

• Electrode Internally-Electrically Connected To Case

  collector

• Mounting Facility Quantity

  1

• Test Data Document

  70143-1300176 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)

• Thread Series Designator

  unf

• Voltage Rating In Volts Per Characteristic

  8.0 maximum emitter to base voltage, dc and 100.0 maximum collector to base voltage, dc and 80.0 maximum collector to emitter voltage, dc and 0.6 maximum collector to emitter saturation voltage

• Internal Configuration

  junction contact

• Special Features

  junction pattern arrangement: npn

• Terminal Type And Quantity

  3 tab, solder lug

• Overall Width Across Flats

  0.870 inches nominal

• Overall Diameter

  0.850 inches nominal

• Semiconductor Material

  silicon

• Nominal Thread Size

  0.312 inches

• Transfer Ratio

  40.0 minimum small-signal short-circuit forward current transfer ratio, common-emitter and 120.0 maximum small-signal short-circuit forward current transfer ratio, common-emitter

• Maximum Operating Temp Per Measurement Point

  200.0 deg celsius junction

• Power Rating Per Characteristic

  100.0 watts small-signal input power, common-collector preset

• Current Rating Per Characteristic

  10.00 microamperes zero-gate-voltage source current preset and 20.00 amperes source cutoff current maximum

• Inclosure Material

  metal

• Overall Length

  1.480 inches nominal