63A68A779
Semiconductor Devices and Associated Hardware
TRANSISTOR
63A68A779
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Overall Length
1.573 inches nominal
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Overall Height
0.450 inches maximum
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Mounting Facility Quantity
2
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Internal Configuration
junction contact
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-3
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Electrode Internally-Electrically Connected To Case
collector
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Internal Junction Configuration
npn
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Semiconductor Material
silicon
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Current Rating Per Characteristic
30.00 amperes maximum collector current,dc and 7.50 amperes maximum base current,dc
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Power Rating Per Characteristic
150.0 watts maximum collector power dissipation
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Overall Width
1.050 inches maximum
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Mounting Method
unthreaded hole
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Features Provided
hermetically sealed case
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Voltage Rating In Volts Per Characteristic
50.0 maximum breakdown voltage,collector-to-base,emitter open and 5.0 maximum breakdown voltage,emitter-to-base,collector open and 40.0 maximum breakdown voltage,collector-to-emitter,base open
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Transfer Ratio
60.0 maximum static forward current transfer ratio,common-emitter
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Terminal Type And Quantity
2 pin and 1 case