2N174
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N174
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Internal Junction Configuration
pnp
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Inclosure Material
metal
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Semiconductor Material
germanium
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Voltage Rating In Volts Per Characteristic
80.0 maximum breakdown voltage, collector-to-base, emitter open and 60.0 maximum emitter to base voltage, static, collector open
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Overall Diameter
1.250 inches maximum
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Power Rating Per Characteristic
30.0 watts small-signal input power, common-collector absolute
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Features Provided
hermetically sealed case
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Overall Length
0.520 inches maximum
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Terminal Type And Quantity
3 tab, solder lug
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Internal Configuration
junction contact
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Terminal Length
0.710 inches maximum
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Current Rating Per Characteristic
15.00 milliamperes source cutoff current maximum and 4.00 milliamperes source cutoff current minimum
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-36
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Transfer Ratio
50.0 maximum static forward current transfer ratio, common-emitter
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Maximum Operating Temp Per Measurement Point
100.0 deg celsius junction
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Mounting Method
terminal
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Electrode Internally-Electrically Connected To Case
collector