QS102E2C3
Semiconductor Devices and Associated Hardware
TRANSISTOR
QS102E2C3
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Terminal Length
0.500 inches minimum
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Overall Height
0.140 inches maximum
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Internal Configuration
junction contact
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Mounting Method
terminal
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Semiconductor Material
silicon
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Inclosure Material
plastic
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Overall Length
0.265 inches maximum
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Overall Width
0.205 inches maximum
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-98
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Internal Junction Configuration
npn
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Current Rating Per Characteristic
2.00 milliamperes maximum collector current, dc
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Maximum Operating Temp Per Measurement Point
100.0 deg celsius junction
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Voltage Rating In Volts Per Characteristic
30.0 maximum collector to base voltage/static/emitter open and 30.0 maximum collector to emitter voltage/static/base open and 5.0 maximum emitter to base voltage, static, collector open
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Power Rating Per Characteristic
200.0 milliwatts maximum total power dissipation
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Transfer Ratio
390.0 maximum static forward current transfer ratio, common-emitter
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Terminal Type And Quantity
3 uninsulated wire lead