DMS 80064B
Semiconductor Devices and Associated Hardware
TRANSISTOR
DMS 80064B
5961 - Semiconductor Devices and Associated Hardware
Defense Electronics Supply Center
TRANSISTOR
ACT NOW! SUBMIT A QUICK QUOTE.
Technical Characteristics
-
Voltage Rating In Volts Per Characteristic
25.0 maximum breakdown voltage, gate-to-source, with all other terminals short-circuited to source and 25.0 maximum breakdown voltage, drain-to-source, with all other terminals short-circuited to source and 5.0 maximum drain to source voltage
-
Features Provided
hermetically sealed case
-
Current Rating Per Characteristic
250.00 milliamperes source cutoff current maximum of standard range
-
Semiconductor Material
silicon
-
Channel Polarity And Control Type (Non-Core)
p-channel insulated gate type
-
Terminal Length
1.500 inches minimum
-
Internal Configuration
field effect
-
Inclosure Material
metal
-
Terminal Type And Quantity
4 uninsulated wire lead
-
Overall Diameter
0.359 inches nominal
-
Overall Length
0.250 inches nominal
-
Mounting Method
terminal
-
Terminal Circle Diameter
0.200 inches nominal
-
Power Rating Per Characteristic
450.0 milliwatts small-signal input power, common-collector minimum
-
Maximum Operating Temp Per Measurement Point
100.0 deg celsius junction