G12SB12

Semiconductor Devices and Associated Hardware

TRANSISTOR

G12SB12

5961-00-232-3702

5961 - Semiconductor Devices and Associated Hardware

Gpd Optoelectronics Corp.

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Technical Characteristics

  • Power Rating Per Characteristic

    50.0 watts small-signal input power, common-collector minimum

  • Internal Configuration

    junction contact

  • Features Provided

    hermetically sealed case

  • Semiconductor Material

    germanium

  • Overall Length

    0.520 inches nominal

  • Inclosure Material

    metal

  • Mounting Method

    threaded stud

  • Electrode Internally-Electrically Connected To Case

    collector

  • Mounting Facility Quantity

    1

  • Nominal Thread Size

    0.190 inches

  • Voltage Rating In Volts Per Characteristic

    80.0 maximum breakdown voltage, collector-to-base, emitter open and 55.0 maximum breakdown voltage, collector-to-emitter, base open and 60.0 maximum breakdown voltage, emitter-to-base, collector open

  • Maximum Operating Temp Per Measurement Point

    100.0 deg celsius junction

  • Thread Series Designator

    unf

  • Current Rating Per Characteristic

    15.00 amperes source cutoff current maximum

  • Terminal Type And Quantity

    2 tab, solder lug and 1 threaded stud

  • Overall Diameter

    1.250 inches nominal

  • Special Features

    junction pattern arrangement: pnp

Certified to
AS6081 Methods

Implementing Quality Procurement

A rigorous vendor selection process and vendor management system are essential to ensuring quality.
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Supplying Quality Products

We take every measure to ensure that we supply quality, authentic parts including a strict vendor selection process and rigorous product inspections..
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Providing Quality People

Our team of dedicated account managers, procurement professionals and specialized inspectors is the most valuable resource we have.
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