DMS 88131B
Semiconductor Devices and Associated Hardware
TRANSISTOR
DMS 88131B
5961 - Semiconductor Devices and Associated Hardware
Defense Electronics Supply Center
TRANSISTOR
ACT NOW! SUBMIT A QUICK QUOTE.
Technical Characteristics
-
Electrode Internally-Electrically Connected To Case
collector
-
Power Rating Per Characteristic
150.0 watts small-signal input power, common-collector absolute
-
Voltage Rating In Volts Per Characteristic
100.0 maximum collector to emitter voltage/static/base open and 100.0 maximum collector to base voltage, dc and 7.0 maximum emitter to base voltage, dc
-
Special Features
junction pattern arrangement: pnp
-
Overall Diameter
0.830 inches maximum
-
Features Provided
hermetically sealed case
-
Semiconductor Material
silicon
-
Current Rating Per Characteristic
4.00 amperes source cutoff current minimum and 10.00 amperes source cutoff current maximum
-
Overall Length
0.300 inches maximum
-
Mounting Facility Quantity
2
-
Terminal Type And Quantity
2 uninsulated wire lead and 1 case
-
Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
-
Mounting Method
unthreaded hole
-
Inclosure Material
metal