DEC3009B
Semiconductor Devices and Associated Hardware
TRANSISTOR
DEC3009B
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
ACT NOW! SUBMIT A QUICK QUOTE.
Technical Characteristics
-
Electrode Internally-Electrically Connected To Case
collector
-
Terminal Type And Quantity
3 uninsulated wire lead
-
Voltage Rating In Volts Per Characteristic
15.0 maximum breakdown voltage, collector-to-emitter, base open and 40.0 maximum breakdown voltage, collector-to-base, emitter open and 4.0 maximum breakdown voltage, emitter-to-base, collector open
-
Mounting Method
terminal
-
Overall Diameter
0.230 inches maximum
-
Internal Configuration
junction contact
-
Special Features
junction pattern arrangement: npn
-
Transfer Ratio
30.0 maximum small-signal short-circuit forward current transfer ratio, common-emitter
-
Features Provided
hermetically sealed case
-
Current Rating Per Characteristic
200.00 milliamperes source cutoff current maximum
-
Semiconductor Material
silicon
-
Power Rating Per Characteristic
360.0 milliwatts small-signal input power, common-collector preset
-
Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-52
-
Overall Length
0.150 inches maximum
-
Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
-
Terminal Length
0.500 inches nominal
-
Inclosure Material
metal
-
Terminal Circle Diameter
0.100 inches nominal