5L.5412.001.35
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICES,UNITIZED
5L.5412.001.35
5961 - Semiconductor Devices and Associated Hardware
Eads Deutschland Gmbh -Verteidigung
SEMICONDUCTOR DEVICES,UNITIZED
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Technical Characteristics
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Current Rating Per Characteristic
50.00 milliamperes source cutoff current maximum all transistor
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-99
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Inclosure Material
metal
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Terminal Type And Quantity
6 uninsulated wire lead
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Component Name And Quantity
2 transistor
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Terminal Length
0.500 inches minimum
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Power Rating Per Characteristic
600.0 milliwatts small-signal input power, common-collector absolute all transistor
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Special Features
matched pair for oscillator and amplifier circuits.; transistor junction pattern arrangement: npn
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Features Provided
hermetically sealed case
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Transfer Ratio
50.0 nominal static forward current transfer ratio, common-emitter all transistor
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Semiconductor Material
silicon all transistor
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Overall Length
0.150 inches minimum and 0.180 inches maximum
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Overall Diameter
0.335 inches minimum and 0.370 inches maximum
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Terminal Circle Diameter
0.200 inches nominal
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Voltage Rating In Volts Per Characteristic
30.0 maximum collector to base voltage, dc all semiconductor and 15.0 maximum collector to emitter voltage/static/base open all semiconductor and 3.0 maximum emitter to base voltage, dc all semiconductor
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Mounting Method
terminal